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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJE2955T DESCRIPTION *With TO-220 package *Complement to type MJE3055T *DC current gain -hFE = 20-70 @ IC = -4 Adc *Collector-emitter saturation voltage VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc APPLICATIONS *Designed for general-purpose switching and amplifier applications. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -5 -10 -6 75 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.67 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ;IB=0 IC=-4A ;IB=-0.4A IC=-10A ;IB=-3.3A IC=-4A ; VCE=-4V VCE=-30V; IB=0 VCE=-70V; VBE(off)=-1.5V TC=150 VCB=-70V; IE=0 TC=150 VEB=-5V; IC=0 IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V 20 5.0 2.0 MIN -60 MJE2955T SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -1.1 -8.0 -1.8 -0.7 -1.0 -5.0 -1.0 -10 -5.0 100 V V V mA mA mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJE2955T Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 |
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